transmissive sensor hoa2862 description features choice of phototransistor or photodarlington output wide operating temperature range (-55?c?to?+100?c) accurate position sensing 0.100 in.(2.54 mm) slot width the hoa2862 series consists of an infrared emitting diode facing an npn silicon phototransistor (hoa2862-001, -002) or photodarlington (hoa2862-003) encased in a black thermoplastic housing. detector switching takes place whenever an opaque object passes through the slot between emitter and detector. the hoa2862 series employs metal can packaged components and has a 0.025 in.(.635 mm) x 0.040 in.(1.02 mm) vertical aperture in front of the detector. the narrow detector aperture is ideal for use in applications in which the maximum rejection of ambient light is important. for additional component information see se1450, sd1440, and sd1410. housing material is polyester. housings are soluble in chlorinated hydrocarbons and ketones. recommended cleaning agents are methanol and isopropanol. dim_058.cdr infra-77.tif outline dimensions in inches (mm) 3 plc decimals 0.010(0.25) tolerance 2 plc decimals 0.020(0.51) honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 346
transmissive sensor hoa2862 electrical characteristics units test conditions min parameter symbol typ max ir emitter detector coupled characteristics absolute maximum ratings (25?c free-air temperature unless otherwise noted) operating temperature range -55?c to 100?c storage temperature range -55?c to 125?c soldering temperature (10 sec) 260?c ir emitter power dissipation 75 mw [] reverse voltage 3 v continuous forward current 50 ma detector trans. darlington collector-emitter voltage 30 v 15 v emitter-collector voltage 5 v 5 v power dissipation 75 mw [] 75 mw [] collector dc current 30 ma 30 ma schematic
transmissive sensor hoa2862 ired forward bias characteristics gra_092.ds4 forward voltage - v f o r w a r d c u r r e n t - m a 0 10 20 30 40 50 60 70 80 90 100 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pulsed condition t a = 25 c t a = 80 c t a = -40 c fig. 1 non-saturated switching time vs load resistance gra_096.ds4 load resistance - ohms r e s p o n s e t i m e - s 1 10 100 1000 10 100 1000 10000 phototransistor photodarlington fig. 2 dark current vs temperature gra_303.cdr
transmissive sensor hoa2862 honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 349
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